• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate is mounted on a carrier and transported through the series of individual cells so that vapor depositions or other related processes may be conducted or performed upon the substrate. Chemical vapor deposition processes such as growth of epitaxial layer, deposition of polycrystalline silicon, nitride, oxide or metals on a substrate may be performed within the reactor. The cells are isolated by viscous loss seals formed by the propinquity of restricted openings in the reactor to substrate carrier configuration.
    公开号:SU720996A3
    申请号:SU2390247
    申请日:1976-08-24
    公开日:1980-03-08
    发明作者:Норман Андерсон Роджер
    申请人:Тексас Инструментс Инкорпорейтед (Фирма)；
    IPC主号:
    专利说明:

    one
    The invention relates to devices for the continuous deposition of layers from the gas phase and can be used in semiconductor and electronic equipment.
    In the known devices for the deposition of layers, the substrate is usually placed inside the reactor, for example a bell, and sealed, followed by deposition. In some reactors, several operations can be carried out by passing the substrate through different sections of the reactor. However, in this case, the sealing of the reaction chamber is broken, and the gases used in the precipitation must be removed before opening the reactor. In addition, if in the process several operations are carried out in the same chamber, this chamber must be blown out before the next operation or with the material used in the previous operation, as a result of which the process cannot be continuous. In addition, time is spent on flushing the camshaft, on opening the chamber to retrieve the treated supports and to set the raw
    substrates into the chamber to repeat the deposition process.
    A device is known for the continuous deposition of layers from the gas phase, which contains a horizontal reactor in the form of interconnected pre-heating chambers, deposition of layers, cooling and gas seal end chambers. A support with a substrate holder and substrates is placed inside the reactor. The substrate can be moved through the chambers. The device is equipped with a substrate heater and nozzles for the input and output of gases 1.
    The device does not provide complete separation of gases between adjacent chambers.
    The aim of the invention is to improve the gas insulation of one chamber from another.
    To achieve this goal, the device is equipped with butt nodes installed between the chambers, and the nozzles are connected to these nodes.
    In addition, the substrate holder with substrates is mounted along the axis of the reactor and divides it into upper and lower parts, and the substrate is located with the working surface down. Butt knots - have a central chamber for inlet and outlet of gases with a KOCTHfcJM gasket on either side of the chamber. The butt assembly may contain two or more chambers separated by a viscous tube (the device may contain more than one chamber of the cathode, the reactor can be seen in the direction of the pipework of the connected butt knots. In the case of LCR, you can see the design of the connected bridge with the butt knots. 2 shows a stand with a pole of the substructure and substrates; FIG. 3 shows a butt assembly at the entrance to the first chamber of the reactor, a transverse section; FIG. 4 shows the side of the reactor chamber and two butt assemblies connecting it with the first and third chambers. permit Fig. 5 shows the reactor chamber and two butt joints, securing them with it and the fifth l wrV iloneperennuyu1 in Fig b - pole. reactor chamber and two steykovyh nodes, the middle of it with.; 7 - the eighth chamber of the reactor and two butt nodes, one of which Hia connects its seventh chamber and the other ape Eu; y in a; rD from the reactor, cross section; FIG. 8 - D | 1 pressure pattern of gases along the length of the reactor ; Fig. 9 is a functional diagram of the orthans of the control and gas flow entering the reactor; in Fig. L O, a function diagram for input and output of gases from a reactor connected to an irley circuit shown in FIG. 9; figure 11 - the same, the other in ariant. DEVICE (figl) contains a reactor with eight chambers 1-8, soyennyh joints 9-17. The composition of these eight chambers includes a chamber 1, a gas cylinder of a seal, amer 2 of a preliminary heating, four chambers 3j-6 precipitated a day, a chamber 7 for cooling a chamber 8 of a nitrogen seal. Gas supply. It is carried out via nozzles 18 for two different deposition processes, the MbifVT gases being sent to any of the four deposition chambers. The cams are heated by knot 19. - A support 20 is installed along the axis of the reactor (Fig. 3). The base plate holder 21 has an opening from the bottom, into which a substrate 22 and a cover 23 are attached, ° C is pressed over the side of the extension. ; lcd lumen used to carry thunderbolt l5finel lumenye 24. Sub; Media partition em
    ,
    l., -, t reactor on the upper and lower parts. Deposition occurs at the bottom, and protective gas is introduced into the upper chamber. The substrate holder 21 and the intermediate 24 are transferred to the reactor on the support 20 through the opening 25 in the first joint. Hole 25 seals the reactor. In the presence of gas inside the chambers prevent the atmosphere from entering the chambers through the inlet of the reactor. ,: ..-. ... , Figures 3-7 show a more detailed6 reactor with five types of joints separating chambers. The joints are symmetrical with respect to the central joint of LZ. The end joints 9 and 17 contain two gas seals {one on top, the other on the bottom). Joints 10–16 with each four pelvic seals each. Junction 13 contains eight such seals. Joints 9 and 17 are designed to create a viscous pressure differential between the chamber with nitrogen and atmosphere. The pressure drop, firstly, provides a damper against pressure bonding as a result of the turbulence of room air, the highest pressure fluctuations in room air are 0.005 mm Hg, the size of the joint and the flow rate of gases are selected to ensure that the nitrogen seal and the atmosphere a pressure differential of about 050 mmHg (this value is higher than the fluctuations in the pressure of room air, which effectively affects the turbulence of room air); secondly, ensure sufficiently long enough for the given output speed with tey7 so that the counter diffusion of the air into the nitrogen to an acceptably low level. Diffusion directed towards the laminar flow is expressed in a decrease in the concentration of diffused particles, which is a negative indicative function of the isolation factor, Defined as the product of the volumetric flow rate and the length of the seal divided by the product of the area. cross section and k; diffusion coefficient .. If this factor is equal to, for example, 20, then a decrease in concentration (effective insulation) will be 5 / 1Q. The dimensions of the seal and the gas flow rates are chosen so that the insulation factor is sufficiently high. . .. ...,.,:. „, G. : V: It relates to all other seals in the KoKthiMi seals, even if the joints are physically more complex and come into contact with other gases. The outputs from each junction should not be blocked so that they can work at atmospheric pressure, which is why The measurements are influenced by volumetric flow rates and temperatures in the adjacent chamber. Thus, the chambers are insulated from one another with viscous seals, and the individual outlets can be combined into a common output collector.
    Joints 10 (FIG. 4) and 16 (FIG. 7) each have two entrances, both at the top and at the bottom, and at the center. They allow different but compatible gases to be introduced into adjacent chambers. Gases must be compatible, since they pass through the outlet to the center. Viscous seals prevent communication between this outlet and the chambers.
    The joint 11 (FIG. 4) and the joint 15 (FIG. 6). are only outlet joints. They release most of the flow from the preheating chamber and the first settling chamber or out. cooling chambers and last deposition chambers. The joint 11 serves to release gases from chambers 2 and 3, and the joint 15 to release gases from chambers 6 and 7.
    The junction 12. (Fig. 5) and the junction 14 (Fig. 6) are similar to the joints 10 and 16, except that each has a single entrance from above. The lower part of each of this junction allows independent selection between two adjacent deposition chambers. The junction 12 provides the section of the inputs in chambers 3 and 4, and the junction 14 - the section of the inputs to chambers 5 and 6.
    The junction 13 (Fig, 5) has a special design. Its purpose is to isolate the released gases in the second deposition chamber 4 from the exhausted gases in the third deposition chamber 5. This allows deposition processes to be carried out in adjacent chambers when the gases are incompatible. The central inlet is for gas that is compatible in both deposition processes. The left exit of the junction 13 is directed to the collector, which is common to all the outputs of the left side of the reactor. This outlet is directed to the combustion means. The right-hand side of the joint 13 is directed to the collector on the right side of the reactor, where it has its own means of combustion.
    Proper selection of the size of the seals and the volumes of inlet flows can adjust the pressure throughout the system.
    The pressure in the system is measured by a capacitive manometer, which can be installed in any part of this system, it communicates with the atmospheric pressure (Figure 2),
    The gas pressure in each chamber both bakes the isolation of the chambers. The dashed lines indicate the gas pressure in the upper part of the chamber, and the solid lines indicate the different pressures throughout the reactor in the lower part of each XM1. The horizontal section of the pressure corresponds to the scheme
    devices directly below the pressure chart. Relatively large pressure changes occur on gas seals in the joints. Very little pressure changes occur inside the chambers. The pressure of the entire system is regulated by appropriate selection of gaps in the joints and gas flow rates. It can be seen that the pressure in the nitrogen seals is higher than atmospheric, which prevents the environment from entering the reactor outside the chamber. The device is made with channels 26.
    Chambers 2-6 are heated by means of unit 19, which includes
    5 se quartz lamps (heaters) 27 and means 28 for water cooling and 29 for air. On each side of the GO-15 junctions, cooling channels 30 are made;
    0 which cooling air can be directed to remove heat from the joints. The chambers themselves are made of a quartz tube that connects the joints. These tubes are sealed with silicone rubber 31, preventing gas from escaping from the joints to the cooling pipes 30 and to the outside atmosphere.
    The gas supply system for the reactor is shown in FIG. The device has
    0 two gas pipeline systems I and P, which can be connected to any of the four deposition chambers by means of valves 32-34. In the off position, gas pipeline system 1
    5 is led to two central deposition chambers through conduits 35 and 36.
    Actuation of valve 33 provides gas supply through pipeline 37, and actuation of valve 34 provides gas supply through pipeline 38. When valve 32 is actuated (without valves 33 and 34), gas from system G goes only to pipeline 36. From system II, gas goes to pipeline 35; To increase the number of deposition chambers, valves 33 and (or) 34 can be activated as before. With the help of valves
    0 39-42 and 43-46 react gases are supplied either to system 1 or to system I.
    During operation, the following four-step start sequence is used.
    In the first stage, valve 47 is actuated, by means of which nitrogen is supplied through all parts of the reactor and gas system.
    0 The 32-G-42 and 43-46 valves are driven by the same energy source as the valve 47.
    权利要求:
    Claims (5)
    [1]
    At the second stage, valves 48.49 and / or 50 (if they have been pre-installed pre-installed) are turned on, as a result of which water is injected. kSSiepy deposition and adjacent joints, If in system I one is used as a carrier gas, the preheating chamber and the two upper precipitation chambers contain hydrogen. If hydrogen is used in system I, then the cooling chamber and the last two upper chambers / and also the central. On air in the exhaust gas and the same will be purged with hydrogen. At this time, cooling water can be connected and heaters 27. At the third stage, they include valves 51-58, as a result of which a certain reaction gas is supplied that is used in the deposition process. At this time, valves 59.60 and (or 61) come into operation. The gases are discharged directly to the combustion. To the fourth degree, the reaction gases are directed to the carrier gas stream. At this time, valves 6266 and 67-69 are turned on (this is the normal starting sequence). . . At each stage, the corresponding protective blocking devices are made. After the launch, the reaktoron works stably with the carrier movement at different periodic intervals. Figure 10 shows a functional circuit assembly illustrating the different directions of gas flow at the joints. All arrows moving away from the columns are denoted by; The gas inlet channels are directed to the outlet of the control system (Fig. 9). All the joints shown in Fig. 10 are lethally shown in Figs 3-7. As noted earlier, the exhaust channels from each half of the reactor are released into the Hai burning. It should be understood that the joints (Fig. 10) can be used with the gas supply system (Fig. 9) and can be used for a two-process reactor with indidual regulation of the three deposition chambers. Depending on the performance of the reactor, the joints can be positioned differently than shown in FIG. 10. Additional joints can be added; as shown, for example, in FIG. 11. Here, instead of outlet, joints 11 are used for inlet (see fig. As a result, the extra central outlet between pipelines 36 and 38 is eliminated (FIG. 10) if both entrances have the same structure and theirs (3 corresponds to the time of deposition Other options for the location of the joints are possible, as well as corresponding modifications of the gas supply system, unlike those shown in Figures 9-11. When using the device, it is decided which depositions should be applied to the substrate and in which cameras. The valves in the control system are set to the desired flow rates, by effectively isolating various chambers with a gas stream, a continuous series of substrates can be moved through the reactor to ensure a continuous process. The systems can be adapted to any number or chemical vapor deposition processes, including deposition of the epitaxial layer, polycrystalline silicon, oxides or metal by selecting the number, order and length of the chambers using co sponding gas temperatures in the chambers and the time for this process. The device for continuous deposition provides effective isolation of various chambers, so that in adjacent chambers it is possible to use confined gases and at the same time carry out various deposition processes. The reactor can be modified by changing models with different chambers and joints. This flexibility provides the reaction chamber in which. A substrate can be continuously processed with any number of processes and combinations of operations. Each chamber is made of quartz, it can be removed for cleaning and replaced, which prevents wear of the entire reactor. Claim 1, A device for the continuous deposition of layers from. gas phase, containing a horizontal reactor, having interconnected preheating chambers, layer deposition, cooling and gas seal chambers, a substrate holder with substrates mounted inside the reactor with axial movement through all chambers, heated and nozzles for inlet and outlet gases, distinguished with the fact that, in order to improve the gas isolation of one chamber from another, the device is equipped with BUTT nodes installed between the cells, and The gas outputs are connected to the specified butt nodes.
    [2]
    2. A device according to claim 1, characterized in that a stand for a substrate support with substrates is installed along the axis of the reactor and divides it into upper and lower parts.
    [3]
    3. Pop-1 device, characterized in that the butt nodes have a central chamber for the inlet or outlet of gases with a viscous seal on both sides of this central chamber,
    [4]
    4. The device according to p. 3, o. tl and tea that the butt nodes have two or more cameras, separated by a viscous seal.
    [5]
    5. The device according to claim 1, 1 and 2, in that the reactor is made in the form of quartz pipes, connecting pipes with butt joints.
    Sources of information taken into account in the examination
    1. US patent 3598082, CL, 118-48, 10.08,71 (prototype).
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    同族专利:
    公开号 | 公开日
    FR2322634B1|1983-01-21|
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    FR2322634A1|1977-04-01|
    CH626121A5|1981-10-30|
    JPS6112993B2|1986-04-11|
    JPS61143578A|1986-07-01|
    SE7609616L|1977-03-03|
    CA1068582A|1979-12-25|
    NL7609443A|1977-03-04|
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    US4048955A|1977-09-20|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
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